Method of preparing primary refractory metal
A method of preparing primary refractory metals (e.g., primary tantalum metal) by contacting a particulate refractory metal oxide (e.g., tantalum pentoxide) with a heated gas (e.g., a plasma), is described. The heated gas comprises hydrogen gas. The temperature range of the heated gas and the mass r...
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creator | Shekhter, Leonid Natan Simkins, Leah F Greville, Hugh P Lanin, Leonid |
description | A method of preparing primary refractory metals (e.g., primary tantalum metal) by contacting a particulate refractory metal oxide (e.g., tantalum pentoxide) with a heated gas (e.g., a plasma), is described. The heated gas comprises hydrogen gas. The temperature range of the heated gas and the mass ratio of hydrogen gas to refractory metal oxide are each selected such that: (i) the heated gas comprises atomic hydrogen; (ii) the refractory metal oxide feed material is substantially thermodynamically stabilized (i.e., the concurrent formation of suboxides that are not reduced by atomic hydrogen is minimized); and (iii) the refractory metal oxide is reduced by contact with the heated gas, thereby forming primary refractory metal (e.g., primary tantalum metal and/or primary niobium metal). |
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Starck Inc</creatorcontrib><description>A method of preparing primary refractory metals (e.g., primary tantalum metal) by contacting a particulate refractory metal oxide (e.g., tantalum pentoxide) with a heated gas (e.g., a plasma), is described. The heated gas comprises hydrogen gas. The temperature range of the heated gas and the mass ratio of hydrogen gas to refractory metal oxide are each selected such that: (i) the heated gas comprises atomic hydrogen; (ii) the refractory metal oxide feed material is substantially thermodynamically stabilized (i.e., the concurrent formation of suboxides that are not reduced by atomic hydrogen is minimized); and (iii) the refractory metal oxide is reduced by contact with the heated gas, thereby forming primary refractory metal (e.g., primary tantalum metal and/or primary niobium metal).</description><language>eng</language><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7399335$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7399335$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Shekhter, Leonid Natan</creatorcontrib><creatorcontrib>Simkins, Leah F</creatorcontrib><creatorcontrib>Greville, Hugh P</creatorcontrib><creatorcontrib>Lanin, Leonid</creatorcontrib><creatorcontrib>H.C. 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The temperature range of the heated gas and the mass ratio of hydrogen gas to refractory metal oxide are each selected such that: (i) the heated gas comprises atomic hydrogen; (ii) the refractory metal oxide feed material is substantially thermodynamically stabilized (i.e., the concurrent formation of suboxides that are not reduced by atomic hydrogen is minimized); and (iii) the refractory metal oxide is reduced by contact with the heated gas, thereby forming primary refractory metal (e.g., primary tantalum metal and/or primary niobium metal).</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZNDxTS3JyE9RyE9TKChKLUgsysxLB7IycxOLKhWKUtOKEpNL8oHM3NSSxBweBta0xJziVF4ozc2g4OYa4uyhW1pckFiSmldSHJ9elAiiDMyNLS2NjU2NiVACAIdFKwU</recordid><startdate>20080715</startdate><enddate>20080715</enddate><creator>Shekhter, Leonid Natan</creator><creator>Simkins, Leah F</creator><creator>Greville, Hugh P</creator><creator>Lanin, Leonid</creator><scope>EFH</scope></search><sort><creationdate>20080715</creationdate><title>Method of preparing primary refractory metal</title><author>Shekhter, Leonid Natan ; Simkins, Leah F ; Greville, Hugh P ; Lanin, Leonid</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_073993353</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Shekhter, Leonid Natan</creatorcontrib><creatorcontrib>Simkins, Leah F</creatorcontrib><creatorcontrib>Greville, Hugh P</creatorcontrib><creatorcontrib>Lanin, Leonid</creatorcontrib><creatorcontrib>H.C. Starck Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shekhter, Leonid Natan</au><au>Simkins, Leah F</au><au>Greville, Hugh P</au><au>Lanin, Leonid</au><aucorp>H.C. Starck Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of preparing primary refractory metal</title><date>2008-07-15</date><risdate>2008</risdate><abstract>A method of preparing primary refractory metals (e.g., primary tantalum metal) by contacting a particulate refractory metal oxide (e.g., tantalum pentoxide) with a heated gas (e.g., a plasma), is described. The heated gas comprises hydrogen gas. The temperature range of the heated gas and the mass ratio of hydrogen gas to refractory metal oxide are each selected such that: (i) the heated gas comprises atomic hydrogen; (ii) the refractory metal oxide feed material is substantially thermodynamically stabilized (i.e., the concurrent formation of suboxides that are not reduced by atomic hydrogen is minimized); and (iii) the refractory metal oxide is reduced by contact with the heated gas, thereby forming primary refractory metal (e.g., primary tantalum metal and/or primary niobium metal).</abstract><oa>free_for_read</oa></addata></record> |
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title | Method of preparing primary refractory metal |
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