Charged particle beam application system

An object of the present invention is to measure a landing angle even in a multi electron beam lithography system in which current amount of each beam is small. Another object thereof is to measure an absolute value of the landing angle and a relative landing angle with the high SN ratio. In a trans...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kamimura, Osamu, Kanosue, Tadashi, Sohda, Yasunari, Goto, Susumu
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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