Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device

A semiconductor device includes a substrate divided into a memory cell region and a logic region. A split gate electrode structure is formed in a memory cell region of a substrate. A silicon oxide layer is formed on a sidewall of the split gate electrode structure and a surface of the substrate. A w...

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Bibliographische Detailangaben

Hauptverfasser:	Moon, Jung-Ho, Yu, Jae-Min, Lee, Don-Woo, Kwon, Chul-Soon, Yoon, In-Gu, Lee, Yong-Sun, Park, Jae-Hyun
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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