Chemical oxide removal of plasma damaged SiCOH low k dielectrics

A method for removing damages of a dual damascene structure after plasma etching is disclosed. The method comprises the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	America, William G, Johnston, Steven H, Messenger, Brian W
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!