Method for monitoring lateral encroachment of spacer process on a CD SEM

A process implementing steps for determining encroachment of a spacer structure in a semiconductor device having thick and thin spacer regions, including a transition region formed therebetween. The method steps comprise: obtaining a line width roughness (LWR) measurement at at least one location al...

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Bibliographische Detailangaben

Hauptverfasser:	Dirahoui, Bachir, Mo, Renee T, Ramachandran, Ravikumar, Solecky, Eric P
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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