Transistor structures

2232 23223 Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO, or...

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Bibliographische Detailangaben

Hauptverfasser:	Wager, III, John F, Hoffman, Randy L
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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