Method for fabricating a semiconductor structure

A method is provided for fabricating a semiconductor structure, such as a DRAM memory cell, that includes an elevated region with at least one sidewall. The at least one sidewall is provided with an insulation layer. A mask layer is applied to the insulation layer. The mask layer is patterned in suc...

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Bibliographische Detailangaben

1. Verfasser:	Hollatz, Mark
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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