Homoepitaxial gallium nitride based photodetector and method of producing

Homoepitaxial gallium nitride based photodetector and method of producing

1-x-yxy1-z-w zw1-xx5 −2A photodetector comprising a gallium nitride substrate, at least one active layer disposed on the substrate, and a conductive contact structure affixed to the active layer and, in some embodiments, the substrate. The invention includes photodetectors having metal-semiconductor...

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Hauptverfasser: D'Evelyn, Mark Philip, Evers, Nicole Andrea, Chu, Kanin
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creator D'Evelyn, Mark Philip
Evers, Nicole Andrea
Chu, Kanin
description 1-x-yxy1-z-w zw1-xx5 −2A photodetector comprising a gallium nitride substrate, at least one active layer disposed on the substrate, and a conductive contact structure affixed to the active layer and, in some embodiments, the substrate. The invention includes photodetectors having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers may comprise GaAlInNPAs, or, preferably, GaAlN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 10cm. A method of making the photodetector is also disclosed.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07291544</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07291544</sourcerecordid><originalsourceid>FETCH-uspatents_grants_072915443</originalsourceid><addsrcrecordid>eNqNyjsKAjEQANA0FqLeYS4g-FmRrUVZe3sZd2azA0kmJBPw-CJ4AKvXvKW7DxqVsxi-BQN4DEFahCRWhBheWJkgz2pKbDyaFsBEENlmJdAJclFqoyS_dosJQ-XNz5WD2_VxGbatZjROVp--4Jfd-dDvT113_KN8APCMNiM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Homoepitaxial gallium nitride based photodetector and method of producing</title><source>USPTO Issued Patents</source><creator>D'Evelyn, Mark Philip ; Evers, Nicole Andrea ; Chu, Kanin</creator><creatorcontrib>D'Evelyn, Mark Philip ; Evers, Nicole Andrea ; Chu, Kanin ; General Electric Company</creatorcontrib><description>1-x-yxy1-z-w zw1-xx5 −2A photodetector comprising a gallium nitride substrate, at least one active layer disposed on the substrate, and a conductive contact structure affixed to the active layer and, in some embodiments, the substrate. The invention includes photodetectors having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers may comprise GaAlInNPAs, or, preferably, GaAlN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 10cm. A method of making the photodetector is also disclosed.</description><language>eng</language><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7291544$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7291544$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>D'Evelyn, Mark Philip</creatorcontrib><creatorcontrib>Evers, Nicole Andrea</creatorcontrib><creatorcontrib>Chu, Kanin</creatorcontrib><creatorcontrib>General Electric Company</creatorcontrib><title>Homoepitaxial gallium nitride based photodetector and method of producing</title><description>1-x-yxy1-z-w zw1-xx5 −2A photodetector comprising a gallium nitride substrate, at least one active layer disposed on the substrate, and a conductive contact structure affixed to the active layer and, in some embodiments, the substrate. The invention includes photodetectors having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers may comprise GaAlInNPAs, or, preferably, GaAlN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 10cm. A method of making the photodetector is also disclosed.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNyjsKAjEQANA0FqLeYS4g-FmRrUVZe3sZd2azA0kmJBPw-CJ4AKvXvKW7DxqVsxi-BQN4DEFahCRWhBheWJkgz2pKbDyaFsBEENlmJdAJclFqoyS_dosJQ-XNz5WD2_VxGbatZjROVp--4Jfd-dDvT113_KN8APCMNiM</recordid><startdate>20071106</startdate><enddate>20071106</enddate><creator>D'Evelyn, Mark Philip</creator><creator>Evers, Nicole Andrea</creator><creator>Chu, Kanin</creator><scope>EFH</scope></search><sort><creationdate>20071106</creationdate><title>Homoepitaxial gallium nitride based photodetector and method of producing</title><author>D'Evelyn, Mark Philip ; Evers, Nicole Andrea ; Chu, Kanin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_072915443</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>online_resources</toplevel><creatorcontrib>D'Evelyn, Mark Philip</creatorcontrib><creatorcontrib>Evers, Nicole Andrea</creatorcontrib><creatorcontrib>Chu, Kanin</creatorcontrib><creatorcontrib>General Electric Company</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>D'Evelyn, Mark Philip</au><au>Evers, Nicole Andrea</au><au>Chu, Kanin</au><aucorp>General Electric Company</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Homoepitaxial gallium nitride based photodetector and method of producing</title><date>2007-11-06</date><risdate>2007</risdate><abstract>1-x-yxy1-z-w zw1-xx5 −2A photodetector comprising a gallium nitride substrate, at least one active layer disposed on the substrate, and a conductive contact structure affixed to the active layer and, in some embodiments, the substrate. The invention includes photodetectors having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers may comprise GaAlInNPAs, or, preferably, GaAlN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 10cm. A method of making the photodetector is also disclosed.</abstract><oa>free_for_read</oa></addata></record>
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title Homoepitaxial gallium nitride based photodetector and method of producing
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T13%3A34%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=D'Evelyn,%20Mark%20Philip&rft.aucorp=General%20Electric%20Company&rft.date=2007-11-06&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07291544%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true