Avalanche photodiode with reduced sidewall defects

2 2 2 A photodetector circuit incorporates an avalanche photodiode structure having a contact layer forming an ohmic contact over an annular region with the annular guard ring. In the fabrication process, the starting substrate can either be the handle wafer of a p− silicon-on-insulator wafer, or a...

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Hauptverfasser:	Glasper, John L, Robbins, David J, Leong, Weng Y
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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