Method for manufacturing trench MOSFET

A method of manufacturing a trench MOSFET with high cell density is disclosed. The method introduces a sidewall oxide spacer for narrowing the opening of the trench structure, thereby decreasing the cell pitch of the memory units. Moreover, the source structure is formed automatically by means of an...

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Bibliographische Detailangaben

Hauptverfasser:	Chang, Chien-Ping, Tseng, Mao Song, Hsieh, Hsin Huang, Yuan, Tien-Min
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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