Methods of implementing magnetic tunnel junction current sensors

Techniques are provided for sensing a first current produced by an active circuit component. According to these techniques, a current sensor is disposed over the active circuit component. The current sensor includes a Magnetic Tunnel Junction ("MTJ") core disposed between a first conductiv...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chung, Young Sir, Baird, Robert W, Durlam, Mark A
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Chung, Young Sir
Baird, Robert W
Durlam, Mark A
description Techniques are provided for sensing a first current produced by an active circuit component. According to these techniques, a current sensor is disposed over the active circuit component. The current sensor includes a Magnetic Tunnel Junction ("MTJ") core disposed between a first conductive layer and a second conductive layer. The MTJ core can be used to sense the first current and produce a second current based on the first current sensed at the MTJ core.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07271011</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07271011</sourcerecordid><originalsourceid>FETCH-uspatents_grants_072710113</originalsourceid><addsrcrecordid>eNrjZHDwTS3JyE8pVshPU8jMLchJzU3NK8nMS1fITUzPSy3JTFYoKc3LS81RyCrNSy7JzM9TSC4tKgKqUShOzSvOLyrmYWBNS8wpTuWF0twMCm6uIc4euqXFBYklQIXF8elFiSDKwNzI3NDA0NCYCCUA5uAy5Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Methods of implementing magnetic tunnel junction current sensors</title><source>USPTO Issued Patents</source><creator>Chung, Young Sir ; Baird, Robert W ; Durlam, Mark A</creator><creatorcontrib>Chung, Young Sir ; Baird, Robert W ; Durlam, Mark A ; Freescale Semiconductor, Inc</creatorcontrib><description>Techniques are provided for sensing a first current produced by an active circuit component. According to these techniques, a current sensor is disposed over the active circuit component. The current sensor includes a Magnetic Tunnel Junction ("MTJ") core disposed between a first conductive layer and a second conductive layer. The MTJ core can be used to sense the first current and produce a second current based on the first current sensed at the MTJ core.</description><language>eng</language><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7271011$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64015</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7271011$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chung, Young Sir</creatorcontrib><creatorcontrib>Baird, Robert W</creatorcontrib><creatorcontrib>Durlam, Mark A</creatorcontrib><creatorcontrib>Freescale Semiconductor, Inc</creatorcontrib><title>Methods of implementing magnetic tunnel junction current sensors</title><description>Techniques are provided for sensing a first current produced by an active circuit component. According to these techniques, a current sensor is disposed over the active circuit component. The current sensor includes a Magnetic Tunnel Junction ("MTJ") core disposed between a first conductive layer and a second conductive layer. The MTJ core can be used to sense the first current and produce a second current based on the first current sensed at the MTJ core.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZHDwTS3JyE8pVshPU8jMLchJzU3NK8nMS1fITUzPSy3JTFYoKc3LS81RyCrNSy7JzM9TSC4tKgKqUShOzSvOLyrmYWBNS8wpTuWF0twMCm6uIc4euqXFBYklQIXF8elFiSDKwNzI3NDA0NCYCCUA5uAy5Q</recordid><startdate>20070918</startdate><enddate>20070918</enddate><creator>Chung, Young Sir</creator><creator>Baird, Robert W</creator><creator>Durlam, Mark A</creator><scope>EFH</scope></search><sort><creationdate>20070918</creationdate><title>Methods of implementing magnetic tunnel junction current sensors</title><author>Chung, Young Sir ; Baird, Robert W ; Durlam, Mark A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_072710113</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Chung, Young Sir</creatorcontrib><creatorcontrib>Baird, Robert W</creatorcontrib><creatorcontrib>Durlam, Mark A</creatorcontrib><creatorcontrib>Freescale Semiconductor, Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chung, Young Sir</au><au>Baird, Robert W</au><au>Durlam, Mark A</au><aucorp>Freescale Semiconductor, Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods of implementing magnetic tunnel junction current sensors</title><date>2007-09-18</date><risdate>2007</risdate><abstract>Techniques are provided for sensing a first current produced by an active circuit component. According to these techniques, a current sensor is disposed over the active circuit component. The current sensor includes a Magnetic Tunnel Junction ("MTJ") core disposed between a first conductive layer and a second conductive layer. The MTJ core can be used to sense the first current and produce a second current based on the first current sensed at the MTJ core.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_07271011
source USPTO Issued Patents
title Methods of implementing magnetic tunnel junction current sensors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T02%3A18%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Chung,%20Young%20Sir&rft.aucorp=Freescale%20Semiconductor,%20Inc&rft.date=2007-09-18&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07271011%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true