Method for fabricating a MIM capacitor having increased capacitance density and related structure

2According to one embodiment of the invention, a method for fabricating a MIM capacitor in a semiconductor die includes a step of depositing a first interconnect metal layer. The method further includes depositing a layer of silicon nitride on the first interconnect layer. The layer of silicon nitri...

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Bibliographische Detailangaben

Hauptverfasser:	Dornisch, Dieter, Ring, Kenneth M, Wang, Tinghao F, Howard, David, Li, Guangming
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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