Process for forming a thin film of TiSiN, in particular for phase change memory devices

42222 The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releas...

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1. Verfasser:	Zonca, Romina
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description	42222 The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releasing gas, such as silane (SiH) and dichlorosilane (SiHCl) at 10-90 sccm-standard cube centimeters per minute-for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H/Nplasma at 200-800 sccm, for 10-90 s, preferably about 40 s.
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exposition to a silicon releasing gas, such as silane (SiH) and dichlorosilane (SiHCl) at 10-90 sccm-standard cube centimeters per minute-for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H/Nplasma at 200-800 sccm, for 10-90 s, preferably about 40 s.</description><language>eng</language><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7253108$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7253108$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Zonca, Romina</creatorcontrib><creatorcontrib>STMicroelectronics S.r.l</creatorcontrib><creatorcontrib>OVONYX, Inc</creatorcontrib><title>Process for forming a thin film of TiSiN, in particular for phase change memory devices</title><description>42222 The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); 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exposition to a silicon releasing gas, such as silane (SiH) and dichlorosilane (SiHCl) at 10-90 sccm-standard cube centimeters per minute-for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H/Nplasma at 200-800 sccm, for 10-90 s, preferably about 40 s.</abstract><oa>free_for_read</oa></addata></record>
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title	Process for forming a thin film of TiSiN, in particular for phase change memory devices
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