Display system and method of producing the same
Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then...
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| creator | Nakajima, Hideharu Doi, Masato |
| description | Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography. |
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| fullrecord | <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07250314</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07250314</sourcerecordid><originalsourceid>FETCH-uspatents_grants_072503143</originalsourceid><addsrcrecordid>eNrjZNB3ySwuyEmsVCiuLC5JzVVIzEtRyE0tychPUchPUygoyk8pTc7MS1coyUhVKE7MTeVhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzI1MDY0MSYCCUA7bwrhg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Display system and method of producing the same</title><source>USPTO Issued Patents</source><creator>Nakajima, Hideharu ; Doi, Masato</creator><creatorcontrib>Nakajima, Hideharu ; Doi, Masato ; Sony Corporation</creatorcontrib><description>Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.</description><language>eng</language><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7250314$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,777,799,882,64018</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7250314$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nakajima, Hideharu</creatorcontrib><creatorcontrib>Doi, Masato</creatorcontrib><creatorcontrib>Sony Corporation</creatorcontrib><title>Display system and method of producing the same</title><description>Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZNB3ySwuyEmsVCiuLC5JzVVIzEtRyE0tychPUchPUygoyk8pTc7MS1coyUhVKE7MTeVhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzI1MDY0MSYCCUA7bwrhg</recordid><startdate>20070731</startdate><enddate>20070731</enddate><creator>Nakajima, Hideharu</creator><creator>Doi, Masato</creator><scope>EFH</scope></search><sort><creationdate>20070731</creationdate><title>Display system and method of producing the same</title><author>Nakajima, Hideharu ; Doi, Masato</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_072503143</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Nakajima, Hideharu</creatorcontrib><creatorcontrib>Doi, Masato</creatorcontrib><creatorcontrib>Sony Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nakajima, Hideharu</au><au>Doi, Masato</au><aucorp>Sony Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Display system and method of producing the same</title><date>2007-07-31</date><risdate>2007</risdate><abstract>Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Display system and method of producing the same |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T22%3A59%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Nakajima,%20Hideharu&rft.aucorp=Sony%20Corporation&rft.date=2007-07-31&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07250314%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |