Non-activated guard ring for semiconductor devices

Non-activated guard ring for semiconductor devices

A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may...

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Hauptverfasser: Zhu, Ting Gang, Shelton, Bryan S, Ceruzzi, Alex D, Liu, Linlin, Murphy, Michael, Pophristic, Milan
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Sprache:eng
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creator Zhu, Ting Gang
Shelton, Bryan S
Ceruzzi, Alex D
Liu, Linlin
Murphy, Michael
Pophristic, Milan
description A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.
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title Non-activated guard ring for semiconductor devices
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