Semiconductor integrated circuit device with high and low breakdown-voltage MISFETs

Provided is a manufacturing method of a semiconductor integrated circuit device having a plurality of first MISFETs in a first region and a plurality of second MISFETs in a second region, which comprises forming a first insulating film between two adjacent regions of the first MISFET forming regions...

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Bibliographische Detailangaben

Hauptverfasser:	Yasuoka, Hideki, Kouketsu, Masami, Ishida, Susumu, Saitou, Kazunari
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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