Single level metal memory cell using chalcogenide cladding

An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substra...

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Bibliographische Detailangaben
Hauptverfasser: Lowrey, Tyler A, Gill, Manzur
Format: Patent
Sprache:eng
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