Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens

Processes for treating a morphologically-modified surface of a silicon upper electrode of a plasma processing chamber include exposing the surface to a gas composition containing at least one gas-phase halogen fluoride. The gas composition is effective to remove silicon from the morphologically-modi...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	Cook, Joel M
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	Cook, Joel M
description	Processes for treating a morphologically-modified surface of a silicon upper electrode of a plasma processing chamber include exposing the surface to a gas composition containing at least one gas-phase halogen fluoride. The gas composition is effective to remove silicon from the morphologically-modified surface and restore the surface state.
format	Patent
fullrecord	<record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07192875</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07192875</sourcerecordid><originalsourceid>FETCH-uspatents_grants_071928753</originalsourceid><addsrcrecordid>eNqNjDsOwjAMQLswIOAOvkAkPkKlMwIxMrAjK3USS2lc2enA7WklDsD0lvfeuklPFU9mZBBEoSph5RJhEB2TZInsMeePG6TnwNSDcWYvBSiTryo9gU0acH7AZEsZ0dyY0Ai4VNKE84SKbZtVwGy0-3HTwP32uj7cZCNWKtXeUXHBvj10x0t7Pv2hfAFrPkKg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens</title><source>USPTO Issued Patents</source><creator>Cook, Joel M</creator><creatorcontrib>Cook, Joel M ; Lam Research Corporation</creatorcontrib><description>Processes for treating a morphologically-modified surface of a silicon upper electrode of a plasma processing chamber include exposing the surface to a gas composition containing at least one gas-phase halogen fluoride. The gas composition is effective to remove silicon from the morphologically-modified surface and restore the surface state.</description><language>eng</language><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7192875$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7192875$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Cook, Joel M</creatorcontrib><creatorcontrib>Lam Research Corporation</creatorcontrib><title>Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens</title><description>Processes for treating a morphologically-modified surface of a silicon upper electrode of a plasma processing chamber include exposing the surface to a gas composition containing at least one gas-phase halogen fluoride. The gas composition is effective to remove silicon from the morphologically-modified surface and restore the surface state.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNjDsOwjAMQLswIOAOvkAkPkKlMwIxMrAjK3USS2lc2enA7WklDsD0lvfeuklPFU9mZBBEoSph5RJhEB2TZInsMeePG6TnwNSDcWYvBSiTryo9gU0acH7AZEsZ0dyY0Ai4VNKE84SKbZtVwGy0-3HTwP32uj7cZCNWKtXeUXHBvj10x0t7Pv2hfAFrPkKg</recordid><startdate>20070320</startdate><enddate>20070320</enddate><creator>Cook, Joel M</creator><scope>EFH</scope></search><sort><creationdate>20070320</creationdate><title>Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens</title><author>Cook, Joel M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_071928753</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Cook, Joel M</creatorcontrib><creatorcontrib>Lam Research Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cook, Joel M</au><aucorp>Lam Research Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens</title><date>2007-03-20</date><risdate>2007</risdate><abstract>Processes for treating a morphologically-modified surface of a silicon upper electrode of a plasma processing chamber include exposing the surface to a gas composition containing at least one gas-phase halogen fluoride. The gas composition is effective to remove silicon from the morphologically-modified surface and restore the surface state.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_uspatents_grants_07192875
source	USPTO Issued Patents
title	Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T15%3A56%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Cook,%20Joel%20M&rft.aucorp=Lam%20Research%20Corporation&rft.date=2007-03-20&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07192875%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true