Techniques for fabricating a resistor on a flexible base material

A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly r...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Durocher, Kevin M, Saia, Richard J, Krishnamurthy, Vikram B
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Durocher, Kevin M
Saia, Richard J
Krishnamurthy, Vikram B
description A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly resistive metal-carbide region. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal carbide region. The metal-carbide region is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate is activated. The selected area forms the area in which the metal-carbide region is formed. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal-carbide region.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07158383</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07158383</sourcerecordid><originalsourceid>FETCH-uspatents_grants_071583833</originalsourceid><addsrcrecordid>eNrjZHAMSU3OyMssLE0tVkjLL1JIS0wqykxOLMnMS1dIVChKLc4sLgEK5-cBeWk5qRWZSTmpCkmJxakKuYklqUWZiTk8DKxpiTnFqbxQmptBwc01xNlDt7S4AKgkr6Q4Pr0oEUQZmBuaWhhbGBsToQQAuq8yZQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Techniques for fabricating a resistor on a flexible base material</title><source>USPTO Issued Patents</source><creator>Durocher, Kevin M ; Saia, Richard J ; Krishnamurthy, Vikram B</creator><creatorcontrib>Durocher, Kevin M ; Saia, Richard J ; Krishnamurthy, Vikram B ; General Electric Company</creatorcontrib><description>A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly resistive metal-carbide region. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal carbide region. The metal-carbide region is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate is activated. The selected area forms the area in which the metal-carbide region is formed. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal-carbide region.</description><language>eng</language><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7158383$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7158383$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Durocher, Kevin M</creatorcontrib><creatorcontrib>Saia, Richard J</creatorcontrib><creatorcontrib>Krishnamurthy, Vikram B</creatorcontrib><creatorcontrib>General Electric Company</creatorcontrib><title>Techniques for fabricating a resistor on a flexible base material</title><description>A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly resistive metal-carbide region. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal carbide region. The metal-carbide region is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate is activated. The selected area forms the area in which the metal-carbide region is formed. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal-carbide region.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZHAMSU3OyMssLE0tVkjLL1JIS0wqykxOLMnMS1dIVChKLc4sLgEK5-cBeWk5qRWZSTmpCkmJxakKuYklqUWZiTk8DKxpiTnFqbxQmptBwc01xNlDt7S4AKgkr6Q4Pr0oEUQZmBuaWhhbGBsToQQAuq8yZQ</recordid><startdate>20070102</startdate><enddate>20070102</enddate><creator>Durocher, Kevin M</creator><creator>Saia, Richard J</creator><creator>Krishnamurthy, Vikram B</creator><scope>EFH</scope></search><sort><creationdate>20070102</creationdate><title>Techniques for fabricating a resistor on a flexible base material</title><author>Durocher, Kevin M ; Saia, Richard J ; Krishnamurthy, Vikram B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_071583833</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Durocher, Kevin M</creatorcontrib><creatorcontrib>Saia, Richard J</creatorcontrib><creatorcontrib>Krishnamurthy, Vikram B</creatorcontrib><creatorcontrib>General Electric Company</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Durocher, Kevin M</au><au>Saia, Richard J</au><au>Krishnamurthy, Vikram B</au><aucorp>General Electric Company</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Techniques for fabricating a resistor on a flexible base material</title><date>2007-01-02</date><risdate>2007</risdate><abstract>A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly resistive metal-carbide region. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal carbide region. The metal-carbide region is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate is activated. The selected area forms the area in which the metal-carbide region is formed. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal-carbide region.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_07158383
source USPTO Issued Patents
title Techniques for fabricating a resistor on a flexible base material
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T01%3A15%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Durocher,%20Kevin%20M&rft.aucorp=General%20Electric%20Company&rft.date=2007-01-02&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07158383%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true