Method of forming metal interconnection layer of semiconductor device

Various methods are provided for forming metal interconnection layers of semiconductor devices. One exemplary method for forming a metal interconnection layer of a semiconductor device includes forming an interlayer dielectric layer on a substrate, forming a hard mask layer on the interlayer dielect...

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Bibliographische Detailangaben

Hauptverfasser:	Kim, Il-Goo, Hah, Sang-Rok, Son, Sae-il, Lee, Kyoung-Woo
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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