Method of manufacturing a semiconductor device with self-aligned contacts

A method of manufacturing a semiconductor device on a semiconductor substrate having a first region and a second region. This method beings by forming a transistor in the first region of said semiconductor substrate. This transistor includes a pair of impurity diffusion regions and a gate electrode....

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Bibliographische Detailangaben

Hauptverfasser:	Itabashi, Kazuo, Tsuboi, Osamu, Yokoyama, Yuji, Inoue, Kenichi, Hashimoto, Koichi, Futo, Wataru
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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