Nitride based semiconductor laser diode device with a bar mask

A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure....

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Bibliographische Detailangaben

Hauptverfasser:	Lan, Wen-How, Shiang, Yuh-Der, Lin, Jia-Ching, Lin, Ker-Jun, Perng, Kai-Fung, Cherng, Ya-Tung
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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