Methods of fabricating a semiconductor device having a metal gate pattern

22 2A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to f...

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Hauptverfasser:	Ku, Ja-Hum, Lee, Chang-Won, Heo, Seong-Jun, Youn, Sun-Pil, Kim, Sung-Man
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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