Copper to aluminum interlayer interconnect using stud and via liner

Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosiv...

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Bibliographische Detailangaben

Hauptverfasser:	Burrell, Lloyd G, Cooney, III, Edward E, Gambino, Jeffrey P, Heidenreich, III, John E, Lee, Hyun Koo, Levy, Mark D, Li, Baozhen, Luce, Stephen E, McDevitt, Thomas L, Stamper, Anthony K, Wong, Kwong Hon, Yankee, Sally J
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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