Power MOSFET device

A power MOSFET device comprising a low resistance substrate of the first conductivity type, a high resistance epitaxial layer of the first conductivity type formed on the low resistance substrate, a base layer of the second conductivity type formed in a surface region of the high resistance epitaxia...

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Bibliographische Detailangaben

Hauptverfasser:	Kawaguchi, Yusuke, Yasuhara, Norio, Ono, Syotaro, Hodama, Shinichi, Nakagawa, Akio
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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