Buried power buss utilized as a ground strap for high current, high power semiconductor devices and a method for providing the same

Buried power buss utilized as a ground strap for high current, high power semiconductor devices and a method for providing the same

A method and system for providing a ground strap on a semiconductor device is disclosed. The method and system includes providing a substrate region and providing an epitaxial (EPI) layer over the substrate region. The method and system includes etching a plurality of device structures in the EPI la...

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1. Verfasser: Husher, John Durbin
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creator Husher, John Durbin
description A method and system for providing a ground strap on a semiconductor device is disclosed. The method and system includes providing a substrate region and providing an epitaxial (EPI) layer over the substrate region. The method and system includes etching a plurality of device structures in the EPI layer and providing a slot in the semiconductor substrate that is in contact with the substrate region. Finally, the method and system includes oxidizing the slot except at the bottom of the slot and providing a metal within the slot.
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The method and system includes providing a substrate region and providing an epitaxial (EPI) layer over the substrate region. The method and system includes etching a plurality of device structures in the EPI layer and providing a slot in the semiconductor substrate that is in contact with the substrate region. Finally, the method and system includes oxidizing the slot except at the bottom of the slot and providing a metal within the slot.</abstract><oa>free_for_read</oa></addata></record>
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title Buried power buss utilized as a ground strap for high current, high power semiconductor devices and a method for providing the same
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