Single transistor rare earth manganite ferroelectric nonvolatile memory cell

A memory device is formed of the one transistor cell type. Such a device has a substrate, a ferroelectric layer which is a film of rare earth manganite, and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer. The invention includes such a device and methods...

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1. Verfasser:	Gnadinger, Fred P
Format:	Patent
Sprache:	eng
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creator	Gnadinger, Fred P
description	A memory device is formed of the one transistor cell type. Such a device has a substrate, a ferroelectric layer which is a film of rare earth manganite, and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer. The invention includes such a device and methods of making the same.
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title	Single transistor rare earth manganite ferroelectric nonvolatile memory cell
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