Method for manufacturing a MOS transistor having reduced 1/f noise

14 2The present invention provides, in one embodiment, a method of reducing 1/f noise in a metal oxide semiconductor (MOS) device. The method comprises forming an oxide layer on a silicon substrate and depositing a polysilicon layer on the oxide layer. The method further includes implanting a fluori...

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Bibliographische Detailangaben

Hauptverfasser:	Hao, Pinghai, Anderson, Larry B, Hou, Fan Chi, Wu, Xiaoju, Patton, Yvonne, Pan, Shanjen, Imam, Zafar
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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