Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias
The present invention provides a method and an apparatus for etching a photolithographic substrate. The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the vacuum chamber, a...
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creator | Constantine, Christopher Plumhoff, Jason Westerman, Russell Johnson, David J |
description | The present invention provides a method and an apparatus for etching a photolithographic substrate. The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the vacuum chamber, and a plasma is generated. An RF bias is supplied to the support member in the vacuum chamber through an RF bias frequency generator at or below the ion transit frequency. Exposed material is etched from the photolithographic substrate with improved CD Etch Linearity and CD Etch Bias since the low frequency bias allows the developed charge on the photolithographic substrate, generated by the plasma, to dissipate. |
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The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the vacuum chamber, and a plasma is generated. An RF bias is supplied to the support member in the vacuum chamber through an RF bias frequency generator at or below the ion transit frequency. 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The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the vacuum chamber, and a plasma is generated. An RF bias is supplied to the support member in the vacuum chamber through an RF bias frequency generator at or below the ion transit frequency. Exposed material is etched from the photolithographic substrate with improved CD Etch Linearity and CD Etch Bias since the low frequency bias allows the developed charge on the photolithographic substrate, generated by the plasma, to dissipate.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNyj0KwkAQBtA0FqLe4buAELBIeklILfY6JrvZwf1zZxeJp5eAB7B6zdtW9y6Phv2MoDGaFBwXB0uLSoLgEU3IwZE8BSWz5c9aDc8Gk_LCeUG0JI5AfoINb-ikXkX5ccGlx4NJ9tVGkxV1-Lmr0HfX83AsEikrn-U2J1qpm7pu26Y5_VG-hX4-Ow</recordid><startdate>20060307</startdate><enddate>20060307</enddate><creator>Constantine, Christopher</creator><creator>Plumhoff, Jason</creator><creator>Westerman, Russell</creator><creator>Johnson, David J</creator><scope>EFH</scope></search><sort><creationdate>20060307</creationdate><title>Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias</title><author>Constantine, Christopher ; Plumhoff, Jason ; Westerman, Russell ; Johnson, David J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_070088773</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Constantine, Christopher</creatorcontrib><creatorcontrib>Plumhoff, Jason</creatorcontrib><creatorcontrib>Westerman, Russell</creatorcontrib><creatorcontrib>Johnson, David J</creatorcontrib><creatorcontrib>Unaxis USA Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Constantine, Christopher</au><au>Plumhoff, Jason</au><au>Westerman, Russell</au><au>Johnson, David J</au><aucorp>Unaxis USA Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias</title><date>2006-03-07</date><risdate>2006</risdate><abstract>The present invention provides a method and an apparatus for etching a photolithographic substrate. The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the vacuum chamber, and a plasma is generated. An RF bias is supplied to the support member in the vacuum chamber through an RF bias frequency generator at or below the ion transit frequency. Exposed material is etched from the photolithographic substrate with improved CD Etch Linearity and CD Etch Bias since the low frequency bias allows the developed charge on the photolithographic substrate, generated by the plasma, to dissipate.</abstract><oa>free_for_read</oa></addata></record> |
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title | Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias |
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