Method of reworking structures incorporating low-k dielectric materials

Methods of etching a semiconductor structure using ion milling with a variable-position endpoint detector to unlayer multiple interconnect layers, including low-k dielectric films. The ion milling process is controlled for each material type to maintain a planar surface with minimal damage to the ex...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kane, Terence Lawrence, Eng, Chung-Ping, Engel, Brett H, Ginsberg, Barry Jack, Macpherson, Dermott A, Petrus, John Charles
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!