Method for forming openings in low-k dielectric layers
A method for etching contact/via openings in low-k dielectric layers is described. The method introduces a carbon deficient ARL which is compatible with the acidic photoresists used by DUV photolithography. The carbon deficiency of the ARL permits the use of fluorocarbon plasma etching ambients to e...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!