Termination structure for trench DMOS device and method of making the same

Embodiments of the present invention are directed to a termination structure provided for a trench DMOS device to reduce occurrence of current leakage resulting from electric field crowding at the border of the active area and a method of manufacturing the same. In one embodiment, the termination st...

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Hauptverfasser:	Hsieh, Hsin-Huang, Chuang, Chiao-Shun, Chang, Su-Wen, Tseng, Mao-Song
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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