Semiconductor substrate, semiconductor device and method for fabricating the same

A SiC bulk substrate whose top face has been flattened is placed in a vertical thin film growth system to be annealed in an inert gas atmosphere. A material gas of Si is then supplied at a flow rate of 1 mL/min. at a substrate temperature of 1200° C. through 1600° C. Subsequently, the diluent gas is...

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Hauptverfasser:	Takahashi, Kunimasa, Uchida, Masao, Kitabatake, Makoto, Yokogawa, Toshiya, Kusumoto, Osamu, Yamashita, Kenya, Miyanaga, Ryoko
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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