Overlay metrology using scatterometry profiling

A method for nondestructively characterizing alignment overlay between two layers of a semiconductor wafer. An incident beam of radiation is directed upon the wafer surface and the properties of the resulting diffracted beam are determined, in one embodiment as a function of wavelength or incident a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lee, Cynthia C, Meisner, Stephen Arlon, Wolf, Thomas Michael, Santoni, Alberto, McIntosh, John Martin
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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