In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer deposited in situ with the SiC mater...
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| Sprache: | eng |
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