Method of plasma etching silicon nitride

32 2A semiconductor manufacturing process wherein silicon nitride is plasma etched with selectivity to an overlying and/or underlying dielectric layer such as a silicon oxide or low-k material. The etchant gas includes a fluorocarbon reactant and an oxygen reactant, the ratio of the flow rate of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Zhu, Helen H, Pirkle, David R, Sadjadi, S. M. Reza, Li, Andrew S
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!