Performing passive voltage contrast on a silicon on insulator semiconductor device

A method and type of device for performing passive voltage contrast on a silicon on insulator (SOI) device. A first portion of a substrate of the SOI device may be ground with a dimpler. A second portion of the substrate of the SOI device may be etched using tetramethylammonium hydroxide (TMAH). A t...

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Bibliographische Detailangaben
Hauptverfasser: Mahanpour, Mehrad, Massoodi, Mohammad, Phengthirath, Dokham
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
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