Method of processing a sample surface having a masking material and an anti-reflective film using a plasma
A surface processing apparatus is provided. In the apparatus, an etching rate ratio of an organic material such as a BARC of anti-reflective film to a resist of mask forming a pattern, that is, a selective ratio is high, the anti-reflective film being a means for forming the pattern with a high accu...
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| Sprache: | eng |
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