Integrated circuit having a device wafer with a diffused doped backside layer

Integrated circuits, semiconductor devices and methods for making the same are described. Each embodiment shows a diffused, doped backside layer in a device wafer that is oxide bonded to a handle wafer. The diffused layer may originate in the device handle, in the handle wafer, in the bond oxide or...

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Bibliographische Detailangaben

Hauptverfasser:	Czagas, Joseph A, Woodbury, Dustin A, Beasom, James D
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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