Three-dimensional integrated semiconductor devices

The present invention describes a process for three-dimensional integration of semiconductor devices and a resulting device. The process combines low temperature wafer bonding methods with backside/substrate contact processing methods, preferably with silicon on insulator devices. The present invent...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Greenlaw, David
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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