Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof

An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallizat...

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Bibliographische Detailangaben

Hauptverfasser:	Barth, Edward, Fitzsimmons, John A, Gates, Stephen M, Ivers, Thomas H, Lane, Sarah L, Lee, Jia, McDonald, Ann, McGahay, Vincent, Restaino, Darryl D
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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