Semiconductor device with self-aligned contact and its manufacture

A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity...

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Bibliographische Detailangaben

Hauptverfasser:	Itabashi, Kazuo, Tsuboi, Osamu, Yokoyama, Yuji, Inoue, Kenichi, Hashimoto, Koichi, Futo, Wataru
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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