Method for patterning a layer of silicon, and method for fabricating an integrated semiconductor circuit

A hard mask made from polysilicon is used to etch a layer to be patterned. The hard mask is patterned using a resist mask. The etching of the hard mask is carried out in such a way that the openings which are etched into the hard mask have inclined sidewalls. This reduces the cross section of the op...

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Hauptverfasser:	Lazar, Laura, Kronke, Matthias
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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