Gate dielectric and method
CMOS gate dielectric made of high-k metal silicates by passivating a silicon surface with nitrogen compounds prior to high-k dielectric deposition. Optionally, a silicon dioxide monolayer may be preserved at the interface.
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| creator | Rotondaro, Antonio L. P Colombo, Luigi Bevan, Malcolm J |
| description | CMOS gate dielectric made of high-k metal silicates by passivating a silicon surface with nitrogen compounds prior to high-k dielectric deposition. Optionally, a silicon dioxide monolayer may be preserved at the interface. |
| format | Patent |
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| language | eng |
| recordid | cdi_uspatents_grants_06919251 |
| source | USPTO Issued Patents |
| title | Gate dielectric and method |
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