Method of fabricating flat-cell mask read-only memory devices

According to embodiments of the invention, a first gate insulating pattern and a mask pattern are sequentially stacked on a semiconductor substrate. Subsequently an impurity region is formed in the semiconductor substrate. Next, the mask pattern is removed to expose the first gate insulating pattern...

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Bibliographische Detailangaben

Hauptverfasser:	Lee, Hee-Jueng, Ko, Myung-Ho
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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