Method and apparatus for tuning a magnetoresistive bias parameter in a data storage system

A method of tuning a bias parameter for a magnetoresistive head in a data storage system includes the step of identifying, from multiple possible bias parameter values, a smallest bias parameter value for the magnetoresistive head which both maintains a bit error rate above a predetermined threshold bit error rate, and which satisfies a second criteria. The method then includes the step of setting an operational bias parameter value for the magnetoresistive head to the identified smallest bias parameter value. Also disclosed are data storage systems, or controllers which are connectable to or included with data storage systems, configured to implement the methods.