Reduced cap layer erosion for borderless contacts

A method of forming borderless contacts and a borderless contact structure for semiconductor devices. A preferred embodiment comprises using a second etch selectivity material disposed over a first etch selectivity material to preserve the first etch selectivity material during the etch processes fo...

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Bibliographische Detailangaben

Hauptverfasser:	Faltermeier, Johnathan, Stephens, Jeremy, Dobuzinsky, David, Clevenger, Larry, Naeem, Munir D, Yu, Chienfan, Nesbit, Larry, Divakaruni, Rama, Maldei, Michael
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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