Reduced cap layer erosion for borderless contacts

Reduced cap layer erosion for borderless contacts

A method of forming borderless contacts and a borderless contact structure for semiconductor devices. A preferred embodiment comprises using a second etch selectivity material disposed over a first etch selectivity material to preserve the first etch selectivity material during the etch processes fo...

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Hauptverfasser: Faltermeier, Johnathan, Stephens, Jeremy, Dobuzinsky, David, Clevenger, Larry, Naeem, Munir D, Yu, Chienfan, Nesbit, Larry, Divakaruni, Rama, Maldei, Michael
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Sprache:eng
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creator Faltermeier, Johnathan
Stephens, Jeremy
Dobuzinsky, David
Clevenger, Larry
Naeem, Munir D
Yu, Chienfan
Nesbit, Larry
Divakaruni, Rama
Maldei, Michael
description A method of forming borderless contacts and a borderless contact structure for semiconductor devices. A preferred embodiment comprises using a second etch selectivity material disposed over a first etch selectivity material to preserve the first etch selectivity material during the etch processes for the various material layers of the semiconductor device while forming the borderless contacts.
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title Reduced cap layer erosion for borderless contacts
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