Semiconductor integrated circuit having a function determination circuit

REF DD P1 P1 P1 P1 P1 P1 DC voltage Vproduced in an LSI and having a value between power supply voltage Vand the ground potential is applied to the gate electrode of pMOS transistor Qwhich forms a function determination circuit. Since the gate voltage of a transistor Qis lower than that in a convent...

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Bibliographische Detailangaben
1. Verfasser: Chonan, Toru
Format: Patent
Sprache:eng
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