Method of fabricating trench MIS device with graduated gate oxide layer

A process for manufacturing a trench MIS device includes depositing a conformal nitride layer in the trench; etching the nitride layer to create an exposed area at the bottom of the trench; and heating the substrate and thereby growing an oxide layer in the exposed area. This process causes the mask...

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Bibliographische Detailangaben

Hauptverfasser:	Yue, Christiana, Darwish, Mohamed N, Giles, Frederick P, Lui, Kam Hong, Chen, Kuo-In, Terrill, Kyle, Pattanayak, Deva N
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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